CSSC-11 and SiMat-4 Joint Workshop program | ||||
Wednesday, April 20 | ||||
11h00m | Registration | |||
11h40m | Opening | |||
12h00m | Detection of H in p-type silicon materials using FR-IR spectroscopy | |||
Erik Marstein | ||||
IFE, Norway | ||||
12h40m | Growth of silicon single crystals with a diameter of 4 inch using the granulate crucible method | |||
R. Menzel, K. Dadzis, A. Nikiforova, N. Lorenz-Meyer, B. Faraji- Tajrishi, N. Abrosimov, H. Riemann |
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Leibniz-Institut für Kristallzüchtung | ||||
13h00m-14h00m | Lunch | |||
Novel monocrystalline materials | ||||
14h00m | OXYGEN, CARBON AND OTHER INTERESTING COMPONENTS OF THE FIRST SINGLE CRYSTAL SILICON RIBBONS PULLED HORIZONTALLY FROM A MELT | |||
Nathan Stoddard, Jesse Appel, Alireza Pirnia, Cecilia Lee, Peter Kellerman and Parthiv Daggolu | ||||
Leading Edge Equipment Technologies | ||||
14h40m | Twin formation in high-velocity Czochralski growth of photovoltaic silicon | |||
Xiang Lu, Shuai Yuan*, Xuegong Yu, Deren Yang | ||||
Zhejiang University, Hangzhou, China | ||||
15h00m | Dislocation activation conditions and dynamics studied in situ by X-ray diffraction imaging in monocrystalline Si near the melting point | |||
Serge Neves Dias, Maike Becker, Hadjer Ouaddah, Isabelle Périchaud, Guillaume Reinhart, Nathalie Mangelinck-Noël, Gabrielle Regula* | ||||
Aix Marseille Univ, Université de Toulon, Marseille, France | ||||
15h20m | Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals | |||
F.Sturm 1*, M. Trempa 1, G. Schuster 2, R. Hegermann 2, P. Götz 2, R. Wagner 3, G. Barroso 3, P. Meisner4, C. Reimann 1, J. Friedrich 1 | ||||
1 Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany | ||||
2 CVT GmbH & Co. KG, Romantische Strasse 18, 87642 Halblech, Germany | ||||
3 Rauschert Heinersdorf-Pressig GmbH, Bahnhofstrasse 1, 96332 Pressig, Germany | ||||
4 SGL Carbon GmbH, Drachenburgstrasse, 53170 Bonn, Germany | ||||
15h40m-16h00m | Cofffee break | |||
Defects in silicon | ||||
16h00m | Kinetics of Light-Induced Instability in Bifacial N-Type Silicon Heterojunctions | |||
Brendan Wright | ||||
UNSW (Aus) | ||||
16h20m | Characterisation of Striations in n-type Silicon Wafer Processed with Polysilicon Contacts | |||
Zhuangyi Zhou 1*, Fiacre Rougieux 1, Manjula Siriwardhana 2, Daniel MacDonald 2, Gianluca Coletti 1,3 | ||||
1 School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Australia | ||||
2 College of Engineering and Computer Science, Australian National University, Australia | ||||
3 TNO Energy Transition, Westerduinweg 3, 1755 LE Petten, the Netherlands | ||||
16h40m | A Study on Degradation Mechanisms in the Czochralski Grown Si Crystal for Solar Cell Applications | |||
Rasit Turan 1,2, Sercan Aslan 1,2, Mehmet Konyar 4, Nurhayat Yıldırım 4, Bulent Arıkan 1, Gence Bektaş 1,3, Hasan Hüseyin Canar 1,3, Salar Habibpur Sedani 1,3, Fırat Es 4, | ||||
1 Middle East Technical University- Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, Turkey | ||||
2 Department of Physics, Middle East Technical University (METU), Ankara, Turkey | ||||
3Micro and Nanotechnology Program (MNT), Middle East Technical University (METU), Ankara, Turkey | ||||
4 Kalyon PV Research and Development Center, Kalyon Güneş Teknolojileri Üretim A.Ş., 06909, Ankara, Turkey | ||||
17h00m | Copper in compensated p-type and n-type Czochralski silicon: diffusivity, influence on the majority carrier density and mobility | |||
Guilherme Gaspar 1, Chiara Modanese 1, Sarah Bernardis 2, Nicolas Enjalbert 2, Lars Arnberg 1, Sebastien Dubois 2, Marisa Di Sabatino 1* | ||||
1 Norwegian University of Science and Technology (NTNU), Department of Materials Science and Engineering, Trondheim, Norway | ||||
2 Univ. Grenoble Alpes, (CEA), LITEN, Department for Solar Energy, National Institute of Solar Energy, France | ||||
Thursday, April 21 | ||||
Directional solidfication, UMG and contacts | ||||
8h30m | Electron And Hole Selective Contacts For Solar Cells | |||
J.M.Serra, I. Costa | ||||
Universidade de Lisboa, Portugal | ||||
9h00m | Towards Low-cost High-efficiency and Reliable Upgraded Metallurgical Silicon Solar Cells | |||
C. del Cañizo 1*, N. Dasilva-Villanueva 1, D. Fuertes Marrón 1, B. Arikan 2, H. H. Canar 2, R. Turan 2,3, G.Sánchez Plaza 4, L. Méndez 5, E. Forniés 5 | ||||
1 Instituto de Energía Solar – Universidad Politécnica de Madrid, Avda. Complutense, 30, Madrid, Spain | ||||
2 Center for Solar Energy Research and Applications (GÜNAM), Ankara, Turkey | ||||
3 Department of Physics, Middle East Technical University, Ankara, Turkey | ||||
4 Nanotechnology Center – Universidad Politécnica de Valencia, Camino de Vera, Valencia, Spain *email: carlos.canizo@upm.es |
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5 Aurinka PV Group, Marie Curie 19, Rivas-Vaciamadrid (Madrid), Spain | ||||
9h20m | Adjustment of resistivity for phosphorus doped n-type multicrystalline silicon | |||
Iryna Buchovska*, Kaspars Dadzis, Natasha Dropka, Frank M. Kiessling | ||||
Leibniz-Institut für Kristallzüchtung (IKZ) | ||||
9h40m | Growth rate-temperature gradient diagrams for control of grain structure in PV ingots | |||
Thierry Duffar 1,2* | ||||
1 Univ. Grenoble Alpes, CNRS, Grenoble INP*, SIMAP, F-38000 Grenoble, France | ||||
* Institute of Engineering Univ. Grenoble Alpes | ||||
2 Visiting Professor, Institute for Materials Research, Tohoku University, Sendai, Japan | ||||
10h00m | Microscopic Charge Carrier Lifetime Mapping for Silicon Material Analysis | |||
Friedemann D. Heinz 1,2*, Maximilian Özkent 2, Clara Rittmann 2, Florian Schindler 2, Martin C. Schubert 2, Wolfram Kwapil 1,2, Stefan Glunz 1,2 | ||||
1 Laboratory for Photovoltaic Energy Conversion, Department for Sustainable Systems Engineering (INATECH), University Freiburg, Germany |
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2 Fraunhofer Institute for Solar Energy Systems (ISE),Freiburg, Germany | ||||
10h20m-11h40m | Coffee break + Poster session | |||
11h40-13h00m | Discussion hot topics | |||
14h00m | Afternoon tour and dinner | |||
Friday, April 22 | ||||
Impact of material properties on cell performance I | ||||
8h20m | Auger parametrization for silicon PV | |||
Tim Niewelt | ||||
Fraunhofer ISE | ||||
Warwick University, UK | ||||
9h00m | PERC-cells from 100% recycling-silicon from end-of-life PV-modules | |||
P. Dold 1, A. Obst 1, P. Henatsch 1, F. Zobel 1, S. Riepe 2, D. Wagenmann 2, E. Lohmüller 2, S. Lohmüller 2 | ||||
1 Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Saale), Germany | ||||
2 Fraunhofer Institute for Solar Energy Systems ISE, Germany | ||||
9h20m | Developing advanced light-trapping structures for back-contact crystalline silicon solar cells by metal-assisted chemical etching | |||
David M. Pera, Ivo Costa, Filipe Serra, Gaspar Gaspar, Killian Lobato, João M. Serra, José A. Silva* | ||||
Instituto Dom Luiz – Faculdade de Ciências Universidade de Lisboa, Portugal | ||||
9h40m-10h00m | Coffee break | |||
Impact of material properties on cell performance II | ||||
10h00 | Bulk and interface defects limiting high-efficiency n-type solar cells | |||
Fiacre Rougieux | ||||
School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Australia | ||||
10h40m | Gettering by polysilicon/oxide passivating contact structures | |||
AnYao Liu*, Zhongshu Yang, Jan Krügener, Frank Feldman, Jana-Isabelle Polzin, BerndSteinhauser, Sieu Pheng Phang, Daniel Macdonald | ||||
ANU, Australia | ||||
11h00m | Alternative Cz Ingot squaring and cell cutting methodology for low temperature PV cell | |||
Mickael Albaric , S. Harrison, B. Martel, F.Dhainaut, T.Desrues | ||||
CEA, LITEN, Department of Solar Technologies, France | ||||
11h20m | Closing |